TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Polarity | N-Channel |
Drain to Source Voltage (Vds) | 1200V |
Continuous Drain Current (Ids) | 6A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STP6N120K3 is a SuperMESH3™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics" SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low ON-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
● Extremely high dV/dt capability
● 100% Avalanche tested
ST Microelectronics
15 Pages / 0.79 MByte
ST Microelectronics
1 Pages / 0.15 MByte
ST Microelectronics
17 Pages / 0.77 MByte
ST Microelectronics
4 Pages / 0.01 MByte
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