| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 56A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The IRFR3710ZTRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.35 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
3 Pages / 0.06 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
International Rectifier
Trans MOSFET N-CH 100V 56A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
International Rectifier
Trans MOSFET N-CH 100V 56A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 15Milliohms; ID 56A; D-Pak (TO-252AA); -55deg
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