| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 35.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 16.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 80.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 17.5 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Low threshold drive
● Gate charge minimized
● High peak power
● High ruggedness capability
ST Microelectronics
14 Pages / 0.63 MByte
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Trans MOSFET N-CH 60V 35A 3Pin(2+Tab) DPAK
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Trans MOSFET N-CH 60V 35A 3Pin(2+Tab) TO-252 T/R
ST Microelectronics
Trans MOSFET N-CH 60V 35A 3Pin(2+Tab) DPAK T/R
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