| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 295A |
The IRFB7530PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, O-ring and redundant power switches, half-bridge and full-bridge topologies.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
12 Pages / 0.29 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
Trans MOSFET N-CH 60V 295A 3Pin(3+Tab) TO-220AB Tube
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