| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 3.10 A |
| Case/Package | 1206 |
| Drain to Source Resistance (on) (Rds) | 80.0 mΩ, 200 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 1.10 W |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 3.90 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
As an alternative to traditional transistors, the NTHC5513T1G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
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