| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 16.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 10.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 45.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 16.0 A |
| Rise Time | 37.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The STB16NF06LT4 is a STripFET™ N-channel Power MOSFET designed unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● Logic level device
● Low gate charge at 100°C
● Low threshold drive
● -55 to 175°C Operating junction temperature range
ST Microelectronics
13 Pages / 0.39 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
N-CHANNEL 60V - 0.07Ω - 16A D2PAK STRIPFET POWER MOSFET
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