| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | Dual P-Channel |
| Drain to Source Voltage (Vds) | 30V |
| Continuous Drain Current (Ids) | 4.9A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7316PBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Fully avalanche rated
Infineon
7 Pages / 0.19 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
8 Pages / 0.11 MByte
International Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET P-CH 30V 4.9A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.042Ω; ID -4.9A; SO-8; PD 2W; VGS +/-20
International Rectifier
Trans MOSFET P-CH 30V 4.9A 8Pin SOIC T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
