| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 200V |
| Continuous Drain Current (Ids) | 18A |
The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Fully avalanche rated
● Dynamic dV/dt rating
● Easy to parallel
● Simple drive requirement
Infineon
11 Pages / 0.32 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
9 Pages / 0.14 MByte
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