| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Rise Time | 17.0 ns |
The IRGB6B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
● Low diode VF
● Square RBSOA
● Positive VCE (on) temperature coefficient
● Rugged transient performance
● Low EMI
● Excellent current sharing in parallel operation
● 10µs Short-circuit capability
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INTERNATIONAL RECTIFIER IRGB6B60KPBF IGBT Single Transistor, 13A, 1.8V, 90W, 600V, TO-220AB, 3Pins
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