| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 5.00 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 35.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 350 pF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 12.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC653N is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMICA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package.
● High density cell design for extremely low RDS (ON)
● Exceptional ON-resistance and maximum DC current capability
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