| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 150 V |
| Current Rating | 43.0 A |
| Case/Package | REEL |
| Drain to Source Resistance (on) (Rds) | 42.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Part Family | IRF3415 |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 43.0 A |
| Rise Time | 55.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fully avalanche rating
Infineon
9 Pages / 0.19 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
IRF
Power MOSFET(Vdss=150V, Rds(on)=0.042Ω, Id=43A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; TO-220AB; PD 200W; VGS +/-20V
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ω; ID 43A; D2Pak; PD 200W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 150V 43A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 150V 43A 3Pin(2+Tab) D2PAK
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