| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | REEL |
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | 20V |
| Continuous Drain Current (Ids) | 2.4A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The IRLMS6702TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
● Generation V technology
● Ultra-low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
Infineon
8 Pages / 0.16 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
6 Pages / 1.89 MByte
Infineon
3 Pages / 0.07 MByte
Infineon
1 Pages / 0.15 MByte
International Rectifier
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageg
International Rectifier
Trans MOSFET P-CH 20V 2.4A 6Pin TSOP T/R
International Rectifier
MOSFET P-CH 20V 2.4A 6-TSOP
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