| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 Full Pack |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STGF19NC60KD IGBT transistor from STMicroelectronics will work effectively even with higher currents. Its maximum power dissipation is 32000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
ST Microelectronics
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ST Microelectronics
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