| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220F |
| Drain to Source Resistance (on) (Rds) | 2.30 Ω |
| Polarity | N-Channel |
| Power Dissipation | 56.0 W |
| Drain to Source Voltage (Vds) | 900V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 6.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FQPF6N90C is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (30nC)
● Low Crss (11pF)
● 100% avalanche tested
Fairchild
10 Pages / 1.08 MByte
Fairchild
10 Pages / 0.84 MByte
Fairchild
3 Pages / 0.27 MByte
Fairchild
MOSFET N-CH 900V 3.4A TO-220F
ON Semiconductor
MOSFET N-CH 900V 3.4A TO-220F
Fairchild
FAIRCHILD SEMICONDUCTOR FQPF6N90C. Power MOSFET, N Channel, 6A, 900V, 2.3Ω, 10V, 5V
Fairchild
Trans MOSFET N-CH 900V 6A 3Pin(3+Tab) TO-220F Rail
ON Semiconductor
MOSFET N-CH 900V 6A TO-220F
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
