| TYPE | DESCRIPTION |
|---|
| Number of Pins | 16 Pin |
| Supply Voltage (DC) | 5.00 V (max) |
| Case/Package | HVQFN |
| Gain | 20.0 dB |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The HMC408LP3E is a 1W high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC Power Amplifier which operates between 5.1 to 5.9GHz. The amplifier provides 20dB of gain, +32.5dBm of saturated power and 27% PAE from a +5V supply voltage. The input is internally matched to 50R while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control.
● 32.5dBm at 27% PAE Saturated power
● Power down capability
● Offer +30dBm P1dB
ADI
RF Amp Single Power Amp 5.9GHz 5.5V 16Pin QFN EP T/R
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ANALOG DEVICES HMC408LP3E RF Amplifier IC, 20dB Gain / 6dB Noise, 5.1GHz to 5.9GHz, 5V, HVQFN-16
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RF Amp Single Power Amp 5.9GHz 5.5V 16Pin QFN EP T/R
ADI
RF Amp Single Power Amp 5.9GHz 5.5V 16Pin QFN EP T/R
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RF Amplifier 1W pow amp SMT, 5.1 - 5.9GHz
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