| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 1.60 A |
| Case/Package | SOT-363/SC70-6 |
| Drain to Source Resistance (on) (Rds) | 160 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 750 mW |
| Input Capacitance | 165 pF |
| Gate Charge | 3.50 nC |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 1.60 A |
| Rise Time | 9.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDG316P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount package
● 3.5nC Typical low gate charge
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