| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 64.0 A |
| Case/Package | TO-264 |
| Drain to Source Resistance (on) (Rds) | 96.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.04 kW |
| Input Capacitance | 1.15 nF |
| Gate Charge | 200 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 64.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
If you need to either amplify or switch between signals in your design, then Ixys Corporation"s IXFK64N60P power MOSFET is for you. Its maximum power dissipation is 1040000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFK64N60P Power MOSFET, PolarFET, N Channel, 64A, 600V, 96mohm, 10V, 5V
IXYS Semiconductor
Mosfet n-Ch 600V 64A To-264
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