| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 800V |
| Continuous Drain Current (Ids) | 3.9A |
Summary of Features:
● Low specific on-state resistance (R DS(on)
●A)
● Very low energy storage in output capacitance (E oss) @ 400V
● Low gate charge (Q g)
● Field-proven CoolMOS™ quality
● CoolMOS™ technology has been manufactured by Infineon since 1998
●Benefits:
● High efficiency and power density
● Outstanding price/performance
● High reliability
● Ease-of-use
●Target Applications:
● LED lighting
Infineon
15 Pages / 2.27 MByte
Infineon
Trans MOSFET N-CH 800V 4A 3Pin(2+Tab) DPAK T/R
IFA
N-Channel 800V 1.4Ω 23NC SMT CoolMOS CE Power Transistor - DPAK
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