| TYPE | DESCRIPTION |
|---|
| Case/Package | PowerSO-10 |
| Drain to Source Resistance (on) (Rds) | 50.0 mΩ |
| Power Dissipation | 83.0 W |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
DESCRIPTION
●The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
●■ LINEAR CURRENT LIMITATION
●■ THERMAL SHUT DOWN
●■ SHORT CIRCUIT PROTECTION
●■ INTEGRATED CLAMP
●■ LOW CURRENT DRAWN FROM INPUT PIN
●■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
●■ ESD PROTECTION
●■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
●■ COMPATIBLE WITH STANDARD POWER MOSFET
ST Microelectronics
13 Pages / 0.39 MByte
ST Microelectronics
Power Switch Lo Side 1Out 14A 0.07Ω Automotive 12Pin(10+2Tab) PowerSO Tube
ST Microelectronics
Power Switch Lo Side 1Out 14A 0.07Ω Automotive 12Pin(10+2Tab) PowerSO T/R
ST Microelectronics
Power MOSFET Transistors N-Ch 70V 20A OmniFET
ST Microelectronics
Power Switch Lo Side 1Out 14A 0.07Ω Automotive 12Pin(10+2Tab) PowerSO T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
