| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 1.40 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 50.0 W |
| Drain to Source Voltage (Vds) | 1.00 kV |
| Breakdown Voltage (Drain to Source) | 1.00 kV |
| Continuous Drain Current (Ids) | 1.40 A |
| Rise Time | 17.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The package is universally preferred at power dissipation levels to approximately 50W. The low thermal contribute to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements
VISHAY
9 Pages / 1.21 MByte
Vishay Semiconductor
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 1000V 1.4A TO-220AB
International Rectifier
MOSFET N-CH 1000V 1.4A TO-220AB
IRF
Power MOSFET(Vdss=1000V, Rds(on)=11Ω, Id=1.4A)
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 11Ω; ID 1.4A; TO-220AB; PD 54W; VGS +/-20V
VISHAY
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
Trans MOSFET N-CH 1kV 1.4A 3Pin(3+Tab) TO-220AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
