| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 3.00 A |
| Case/Package | TO-220 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 40.0 W |
| Breakdown Voltage (Collector to Emitter) | 80.0 V |
| Continuous Collector Current | 3A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
If you require a general purpose BJT that can handle high voltages, then the NPN TIP31BG BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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