| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Polarity | N-Channel |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STW21NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● Worldwide best RDS (ON) area amongst the fast recovery diode devices
● 100% avalanche tested
● Extremely high dV/dt and avalanche capabilities
ST Microelectronics
2 Pages / 0.07 MByte
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21 Pages / 1.35 MByte
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32 Pages / 0.51 MByte
ST Microelectronics
N-channel 600V, 0.17Ω typ., 17A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package
ST Microelectronics
Trans MOSFET N-CH 600V 17A 3Pin(3+Tab) TO-247 Tube
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