| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | REEL |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Drain to Source Voltage (Vds) | 150V |
| Continuous Drain Current (Ids) | 50A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
● Excellent switching performance
● Environmentally-friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy to design
Infineon
12 Pages / 0.97 MByte
Infineon
5 Pages / 0.05 MByte
Infineon
7 Pages / 0.07 MByte
Infineon
The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Infineon
OptiMOS3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
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