TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 13.0 A |
Case/Package | TO-247 |
Drain to Source Resistance (on) (Rds) | 550 mΩ |
Polarity | N-Channel |
Power Dissipation | 150 W |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
Continuous Drain Current (Ids) | 13.0 A |
Rise Time | 14.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The STW13NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● Very low intrinsic capacitance
● Very good manufacturing repeatability
ST Microelectronics
18 Pages / 0.47 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
32 Pages / 0.51 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.