| TYPE | DESCRIPTION |
|---|
| Case/Package | REEL |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 36A |
The IRL540NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Logic-level gate drive
● Advanced process technology
Infineon
9 Pages / 1.02 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.04 MByte
Infineon
1 Pages / 0.12 MByte
Vishay Siliconix
MOSFET N-CH 100V 28A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
VISHAY IRL540SPBF MOSFET Transistor, N Channel, 28A, 100V, 0.077Ω, 5V, 2V
Vishay Semiconductor
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.044Ω; ID 36A; TO-220AB; PD 140W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.044Ω; ID 36A; D2Pak; PD 140W; VGS +/-16V
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