| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -80.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 18.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 190 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP80PF55 is a P-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
● Extremely dv/dt capability
● 100% Avalanche tested
● Application oriented characterization
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