| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 62.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 27.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Input Capacitance | 7.23 nF |
| Gate Charge | 99.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 62.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDB2614 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handing capability
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