| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 6.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 1.20 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 6.00 A |
| Rise Time | 14.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP6NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is series is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● 100% Avalanche tested
● Extremely high dV/dt capability
ST Microelectronics
17 Pages / 0.43 MByte
ST Microelectronics
20 Pages / 2.6 MByte
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4 Pages / 0.01 MByte
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1 Pages / 0.12 MByte
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