| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 50.0 A |
| Case/Package | TO-220FP |
| Drain to Source Resistance (on) (Rds) | 15.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 30.0 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 8.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP55NF06FP is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique STripFET process. It is specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications and applications with low gate charge driving requirements.
● 100% Avalanche tested
● Exceptional dV/dt capability
● -55 to 175°C Operating junction temperature range
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N-CHANNEL 60V - 0.017Ω - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET
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