| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 120 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 10.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 312 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 110 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The STP120NF10 is a N-channel Power MOSFET, STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer application. It is also intended for any applications with low gate drive requirements.
● Exceptional dv/dt Capability
● 100% Avalanche Tested
● Application Oriented Characterization
ST Microelectronics
21 Pages / 0.91 MByte
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5 Pages / 0.04 MByte
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