| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 630 mA |
| Case/Package | SOT-363 |
| Drain to Source Resistance (on) (Rds) | 360 mΩ, 510 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 270 mW |
| Drain to Source Voltage (Vds) | 20.0 V |
| Continuous Drain Current (Ids) | 775 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.
● Complementary N and P channel device
● Leading -8V trench for low RDS(on) performance
● ESD protected gate- Class 1 ESD rating
● 460°C/W Thermal resistance, junction to ambient
ON Semiconductor
8 Pages / 0.14 MByte
ON Semiconductor
1 Pages / 0.2 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88
ON Semiconductor
Trans MOSFET N/P-CH 20V/8V 0.63A/0.775A 6Pin SC-88 T/R
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