| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.00 A |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 260 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.30 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● -55 to 150°C Operating junction temperature range
ST Microelectronics
13 Pages / 0.24 MByte
ST Microelectronics
4 Pages / 0.21 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
Trans MOSFET N-CH 100V 2A 4Pin(3+Tab) SOT-223 T/R
ST Microelectronics
Trans MOSFET N-CH 100V 1.8A 4Pin(3+Tab) SOT-223 T/R
ST Microelectronics
Trans MOSFET N-CH 60V 2A 4Pin(3+Tab) SOT-223
ST Microelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
API
Switch, SPDT, DC to 5GHz, N Female
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
