| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247AC |
| Polarity | N-Channel |
| Rise Time | 25.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
● ±20V Gate-emitter voltage
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IGBT Single Transistor, 55A, 2V, 200W, 600V, TO-247AC, 3Pins
International Rectifier
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
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Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
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Infineon
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
Igbt 600V 55A 200W To247ac Igbt 600V 55A 200W To247ac Igbt 600V 55A 200W To247ac
International Rectifier
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
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