| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 5.00 A |
| Case/Package | TO-252 |
| Power Dissipation | 55.0 W |
| Rise Time | 170 ns |
| Breakdown Voltage (Collector to Emitter) | 1.20 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The STGD5NB120SZT4 is a 1200V Low Drop Internally Clamped IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in inrush current limitation and pre-heating for electronic lamp ballast. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
● Low on-voltage drop
● High current capability
● Off losses include tail current
● High voltage clamping, low VCE (sat) for reduced conduction losses
● Tight parameter distribution for design simplification and easy paralleling
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