| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 48.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 25.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 100 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 48.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The NDP6060L is a logic level N-channel enhancement-mode power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
● Low drive requirements allowing operation directly from logic drivers
● Critical DC electrical parameters specified at elevated temperature
● High density cell design for extremely low RDS (ON)
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