| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Voltage Rating (DC) | 600 V |
| Current Rating | 40.0 A |
| Case/Package | ISOTOP |
| Drain to Source Resistance (on) (Rds) | 130 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 460 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 42.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This STE40NC60 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 460000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -65 °C to 150 °C.
ST Microelectronics
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