| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 33.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 52.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 127 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | 33.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FQB33N10TM is a 100V N-channel QFET® MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
● Low gate charge (typical 38nC)
● Low Crss (typical 62pF)
● 100% Avalanche tested
● ±25V Gate source voltage
● 40°C/W Thermal resistance, junction to ambient
● 1.18°C/W Thermal resistance, junction to case
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