| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 8.50 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 56.0 A, 80.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD65N55F3 is a STripFET™ N-channel enhancement-mode Power MOSFET designed with latest refinement of unique Single Feature Size™ strip-based process. The process decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
● Standard threshold drive
● 100% Avalanche tested
● -55 to 175°C Operating junction temperature range
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