| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | 6-TSSOP, SC-88, SOT-363 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 65V |
| Continuous Collector Current | 0.1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP SBC856BDW1T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
7 Pages / 0.11 MByte
ON Semiconductor
7 Pages / 0.04 MByte
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