TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 60.0 A |
Case/Package | TO-252 |
Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 110 W |
Drain to Source Voltage (Vds) | 55.0 V |
Breakdown Voltage (Drain to Source) | 55.0 V |
Breakdown Voltage (Gate to Source) | -15.0 V to 15.0 V |
Continuous Drain Current (Ids) | 30.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The STD60NF55LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low On-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Low threshold drive
● -55 to 175°C Operating junction temperature range
ST Microelectronics
14 Pages / 0.41 MByte
ST Microelectronics
4 Pages / 0.18 MByte
ST Microelectronics
STD60NF55 Series 55V 15mOhm N-Ch STripFET II Power MOSFET - TO-252-3 (DPAK)
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