| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Polarity | PNP |
| Power Dissipation | 650 mW |
| Breakdown Voltage (Collector to Emitter) | 100V |
| Continuous Collector Current | 1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The PBSS9110Z is a 1A PNP breakthrough-in small signal (BISS) Transistor in a surface-mount plastic package with increased heat-sink.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● NPN complement is PBSS8110Z
● PB9110 Marking code
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