| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 4.00 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 2.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Rise Time | 9.50 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD4NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● Very low intrinsic capacitance
ST Microelectronics
16 Pages / 0.74 MByte
ST Microelectronics
1 Pages / 0.42 MByte
ST Microelectronics
26 Pages / 1.04 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
N-CHANNEL 600V - 1.76Ω - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 600V - 1.76Ω - 4A TO-220/TO-220FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
