| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 1.00 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 8.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 30.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 1.00 A |
| Rise Time | 5.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STD1NK60T4 is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
● Extremely high dV/dt capability
● Improved ESD capability
● 100% Avalanche tested
● New high voltage benchmark
ST Microelectronics
15 Pages / 0.41 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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