| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 650V |
| Continuous Drain Current (Ids) | 7A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The STB8N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. The MDmesh™ V Power MOSFET is based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Worldwide best RDS (ON) area
● Higher VDSS rating
● High dV/dt capability
● 100% Avalanche tested
● Easy to drive
ST Microelectronics
25 Pages / 1.26 MByte
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3 Pages / 0.31 MByte
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26 Pages / 1.42 MByte
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10 Pages / 0.75 MByte
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