| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 60.0 A |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -15.0 V to 15.0 V |
| Continuous Drain Current (Ids) | 60.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The STB60NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Low threshold drive
● -55 to 175°C Operating junction temperature range
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