| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220AB |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 75V |
| Continuous Drain Current (Ids) | 82A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The AUIRF2807 is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Stripe planar design
● Advanced planar technology
● Low ON-resistance
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
Infineon
11 Pages / 0.19 MByte
Infineon
2 Pages / 0.17 MByte
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