| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 120 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 7.50 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 310 W |
| Drain to Source Voltage (Vds) | 75.0 V |
| Breakdown Voltage (Drain to Source) | 75.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 120 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Description
●This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
●■ 100% avalanche tested
●Applications
●■ Switching application
ST Microelectronics
18 Pages / 0.5 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
Trans MOSFET N-CH 75V 120A 3Pin(3+Tab) IPAK Tube
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