| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 20.0 A |
| Case/Package | TO-263 |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Input Capacitance | 3.00 nF |
| Gate Charge | 103 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.0 A |
| TYPE | DESCRIPTION |
|---|
| Packaging | Cut Tape (CT) |
The SPB20N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
● New revolutionary high voltage technology
● Extreme dV/dt rated
● Ultra low effective capacitance
● Qualified according to JEDEC for target applications
● Improved transconductance
● Innovative high voltage technology
● Worldwide best RDS (ON)
● Periodic avalanche rated
Infineon
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