| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 150V |
| Continuous Collector Current | 1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The PBHV8115Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● PNP complement is PBHV9115Z
● V8115Z Marking code
NXP
PBHV8115TLH - 150V, 1A NPN high-voltage low VCEsat BISS transistor
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