| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 6.00 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 32.0 mΩ |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.00 W |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 6.00 A |
| Rise Time | 22.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
This NTMD6N03R2G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
7 Pages / 0.2 MByte
ON Semiconductor
12 Pages / 0.08 MByte
ON Semiconductor
Trans MOSFET N-CH 30V 6A 8Pin SOIC N T/R
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